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इसी प्रकार केSTH60N10

  • STH60N10
    • Power dissipation 200 W Transistor polarity N Channel Current Id cont. 60 A Current Idm pulse 240 A Pitch lead 5.45 mm Voltage Vds max 100 V Resistance Rds on 0.025 R Temperature current 25 ?C
  • STH60N10FI
    • N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
  • STH6N100
    • N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
  • STH6N100FI
    • N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
  • STH6NA80FI
    • N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS

STH60N10 Datasheet और माड्यूल

निर्माता : ST Microelectronics 

पैकिंग : TO-218 

पिन : 0 

तापमान : न्यूनतम 0 °C | अधिकतम 0 °C

आकार : 270 KB

अनुप्रयोग : Power dissipation 200 W Transistor polarity N Channel Current Id cont. 60 A Current Idm pulse 240 A Pitch lead 5.45 mm Voltage Vds max 100 V Resistance Rds on 0.025 R Temperature current 25 ?C 

STH60N10 पीडीएफ डाउनलोड करें