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माड्यूल IRF130 : Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =100V, RDS(on) = 0.18 Ohm, ID = 14A
इसी प्रकार केIRF130
- IRF1010E
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.
- IRF1010EL
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.
- IRF1010ES
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.
- IRF1010N
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A.
- IRF1010NL
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A.
- IRF1010NS
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A.
- IRF1104
- HEXFET power MOSFET. VDSS = 40V, RDS(on) = 0.009 Ohm, ID = 100A.
- IRF130
- Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =100V, RDS(on) = 0.18 Ohm, ID = 14A
IRF130 Datasheet और माड्यूल
निर्माता : IR
पैकिंग : TO-3
पिन : 3
तापमान : न्यूनतम -55 °C | अधिकतम 150 °C
आकार : 161 KB
अनुप्रयोग : Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =100V, RDS(on) = 0.18 Ohm, ID = 14A
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