पथ :OKDatasheet > सेमीकंडक्टर Datasheet > IR Datasheet > IRC640
माड्यूल IRC640 : "HEXFET power MOSFET. Continuous drain current 18A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 200V. Drain-to-source on-resistance 0.18 Ohm"
इसी प्रकार केIRC640
- IRC630
- "HEXFET power MOSFET. Continuous drain current 9.0A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 200V. Drain-to-source on-resistance 0.40 Ohm"
- IRC630
- HEXFET power MOSFET. Continuous drain current 9.0A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 200V. Drain-to-source on-resistance 0.40 Ohm
- IRC640
- "HEXFET power MOSFET. Continuous drain current 18A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 200V. Drain-to-source on-resistance 0.18 Ohm"
- IRC644
- HEXFET power MOSFET. Continuous drain current 14A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 250V. Drain-to-source on-resistance 0.28 Ohm
IRC640 Datasheet और माड्यूल
निर्माता : IR
पैकिंग : TO-220
पिन : 5
तापमान : न्यूनतम -55 °C | अधिकतम 150 °C
आकार : 250 KB
अनुप्रयोग : "HEXFET power MOSFET. Continuous drain current 18A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 200V. Drain-to-source on-resistance 0.18 Ohm"
IRC640 पीडीएफ डाउनलोड करें