पथ :OKDatasheet > सेमीकंडक्टर Datasheet > IR Datasheet > IRC630
माड्यूल IRC630 : "HEXFET power MOSFET. Continuous drain current 9.0A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 200V. Drain-to-source on-resistance 0.40 Ohm"
पथ :OKDatasheet > सेमीकंडक्टर Datasheet > IR Datasheet > IRC630
माड्यूल IRC630 : "HEXFET power MOSFET. Continuous drain current 9.0A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 200V. Drain-to-source on-resistance 0.40 Ohm"
निर्माता : IR
पैकिंग : TO-220
पिन : 5
तापमान : न्यूनतम -55 °C | अधिकतम 150 °C
आकार : 251 KB
अनुप्रयोग : "HEXFET power MOSFET. Continuous drain current 9.0A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 200V. Drain-to-source on-resistance 0.40 Ohm"