इसी प्रकार केIRC630

  • IRC630
    • "HEXFET power MOSFET. Continuous drain current 9.0A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 200V. Drain-to-source on-resistance 0.40 Ohm"
  • IRC630
    • HEXFET power MOSFET. Continuous drain current 9.0A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 200V. Drain-to-source on-resistance 0.40 Ohm
  • IRC640
    • "HEXFET power MOSFET. Continuous drain current 18A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 200V. Drain-to-source on-resistance 0.18 Ohm"
  • IRC644
    • HEXFET power MOSFET. Continuous drain current 14A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 250V. Drain-to-source on-resistance 0.28 Ohm

IRC630 Datasheet और माड्यूल

निर्माता : IR 

पैकिंग : TO-220 

पिन : 5 

तापमान : न्यूनतम -55 °C | अधिकतम 150 °C

आकार : 251 KB

अनुप्रयोग : "HEXFET power MOSFET. Continuous drain current 9.0A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 200V. Drain-to-source on-resistance 0.40 Ohm" 

IRC630 पीडीएफ डाउनलोड करें