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माड्यूल MJD122T4 : NPN darlington transistor for high DC current gain, 100V, 5A
इसी प्रकार केMJD122T4
- MJD112
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD117
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD122
- COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- MJD122-1
- "NPN darlington transistor for high DC current gain, 100V, 5A"
- MJD122T4
- NPN darlington transistor for high DC current gain, 100V, 5A
- MJD127-1
- PNP darlington transistor for high DC current gain, 100V, 5A
- MJD127T4
- PNP darlington transistor for high DC current gain, 100V, 5A
MJD122T4 Datasheet और माड्यूल
निर्माता : ST Microelectronics
पैकिंग : TO-252
पिन : 3
तापमान : न्यूनतम -65 °C | अधिकतम 150 °C
आकार : 100 KB
अनुप्रयोग : NPN darlington transistor for high DC current gain, 100V, 5A
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