माड्यूल F1209 : 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

इसी प्रकार केF1209

F1206
- 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1207
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1208
- 40 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1209
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1209 Datasheet और माड्यूल

निर्माता : Polyfet RF

पैकिंग :

पिन : 8

तापमान : न्यूनतम -65 °C | अधिकतम 150 °C

आकार : 39 KB

अनुप्रयोग : 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor