माड्यूल F1060 : 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

इसी प्रकार केF1060

F1060
- 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1063
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1065
- 120 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1066
- 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1069
- 20 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1060 Datasheet और माड्यूल

निर्माता : Polyfet RF

पैकिंग :

पिन : 2

तापमान : न्यूनतम -65 °C | अधिकतम 150 °C

आकार : 41 KB

अनुप्रयोग : 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor