माड्यूल F1020 : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

इसी प्रकार केF1020

F1020
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1021
- 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1022
- 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1027
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1020 Datasheet और माड्यूल

निर्माता : Polyfet RF

पैकिंग :

पिन : 4

तापमान : न्यूनतम -65 °C | अधिकतम 150 °C

आकार : 43 KB

अनुप्रयोग : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor