माड्यूल F1012 : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

इसी प्रकार केF1012

F1012
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1014
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1015
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1016
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1018
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1019
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1012 Datasheet और माड्यूल

निर्माता : Polyfet RF

पैकिंग :

पिन : 4

तापमान : न्यूनतम -65 °C | अधिकतम 150 °C

आकार : 41 KB

अनुप्रयोग : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor