माड्यूल F1003 : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

इसी प्रकार केF1003

F1001
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1001C
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1003
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1004
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1005
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1006
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1007
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1003 Datasheet और माड्यूल

निर्माता : Polyfet RF

पैकिंग :

पिन : 4

तापमान : न्यूनतम -65 °C | अधिकतम 150 °C

आकार : 40 KB

अनुप्रयोग : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor