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माड्यूल MJE18004D2 : High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
इसी प्रकार केMJE18004D2
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MJE18004D2 Datasheet और माड्यूल
निर्माता : ON Semiconductor
पैकिंग : TO-220
पिन : 3
तापमान : न्यूनतम 0 °C | अधिकतम 0 °C
आकार : 512 KB
अनुप्रयोग : High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
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