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माड्यूल MGY25N120D : Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
इसी प्रकार केMGY25N120D
- MGY20N120D
- Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
- MGY25N120
- Insulated Gate Bipolar Transistor N-Channel
- MGY25N120
- Insulated Gate Bipolar Transistor N-Channel
- MGY25N120D
- Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
MGY25N120D Datasheet और माड्यूल
निर्माता : ON Semiconductor
पैकिंग : TO-3PBL
पिन : 3
तापमान : न्यूनतम 0 °C | अधिकतम 0 °C
आकार : 188 KB
अनुप्रयोग : Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
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