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इसी प्रकार केNTE610

  • NTE60
    • Silicon complrmentary NPN transistor to NTE61. High power audio, disk head positioner for linear applications.
  • NTE6002
    • Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
  • NTE6003
    • Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
  • NTE6004
    • Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
  • NTE6005
    • Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
  • NTE6007
    • Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 200V. Average rectified forward current 40A.
  • NTE6008
    • Fast recovery rectifier, 200ns. Cathode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
  • NTE6009
    • Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.

NTE610 Datasheet और माड्यूल

निर्माता : NTE Electronic 

पैकिंग :  

पिन : 2 

तापमान : न्यूनतम 0 °C | अधिकतम 0 °C

आकार : 20 KB

अनुप्रयोग : Voltage variable capacitance diode (tuning diode). Diode capacitance(typ) Ct = 6.8pF. 

NTE610 पीडीएफ डाउनलोड करें