माड्यूल NTE3312 : Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.

इसी प्रकार केNTE3312

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NTE3312 Datasheet और माड्यूल

निर्माता : NTE Electronic

पैकिंग :

पिन : 3

तापमान : न्यूनतम 0 °C | अधिकतम 150 °C

आकार : 19 KB

अनुप्रयोग : Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.