माड्यूल BUZ906DP : P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V.

इसी प्रकार केBUZ906DP

BUZ903P
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V.
BUZ906D
- P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V.
BUZ902D
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ908
- P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V.
BUZ902
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ901X4S
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.
BUZ902
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ900X4S
- N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.

BUZ906DP Datasheet और माड्यूल

निर्माता : Magnatec

पैकिंग : TO-3PBL

पिन : 3

तापमान : न्यूनतम 0 °C | अधिकतम 150 °C

आकार : 42 KB

अनुप्रयोग : P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V.