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माड्यूल IRFBC30L : HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A
इसी प्रकार केIRFBC30L
- IRFB11N50A
- HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 11A
- IRFB13N50A
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- IRFB18N50K
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- IRFB23N15D
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.090 Ohm, ID = 23A
- IRFB23N20D
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.10 Ohm, ID = 24A
- IRFB260N
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- IRFB31N20D
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.082 Ohm, ID = 31A
- IRFB33N15D
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.056 Ohm, ID = 33A
IRFBC30L Datasheet और माड्यूल
निर्माता : IR
पैकिंग : TO-262
पिन : 3
तापमान : न्यूनतम -55 °C | अधिकतम 150 °C
आकार : 161 KB
अनुप्रयोग : HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A
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