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माड्यूल IRFB9N60A : HEXFET power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 9.2A
इसी प्रकार केIRFB9N60A
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IRFB9N60A Datasheet और माड्यूल
निर्माता : IR
पैकिंग :
पिन : 3
तापमान : न्यूनतम -55 °C | अधिकतम 150 °C
आकार : 148 KB
अनुप्रयोग : HEXFET power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 9.2A
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