माड्यूल IRF9530N : HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.20 Ohm, ID = -14A

इसी प्रकार केIRF9530N

IRF9130
- Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = -100V, RDS(on) = 0.30 Ohm, ID = -11A
IRF9140
- HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A
IRF9140
- HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A
IRF9140
- HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A
IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A

IRF9530N Datasheet और माड्यूल

निर्माता : IR

पैकिंग :

पिन : 3

तापमान : न्यूनतम -55 °C | अधिकतम 175 °C

आकार : 124 KB

अनुप्रयोग : HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.20 Ohm, ID = -14A