इसी प्रकार केIRF7901D1

  • IRF7103
    • N-channel power MOSFET for fast switching applications, 50V, 3A
  • IRF7103Q
    • N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
  • IRF7103Q
    • N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
  • IRF7103QTR
    • N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
  • IRF720
    • N-channel HEXFET, 400V, 3.3A
  • IRF7204
    • P-channel MOSFET for fast switching applications, 20V, 5.3A
  • IRF721
    • N-channel HEXFET, 350V, 3.3A
  • IRF722
    • N-channel HEXFET, 400V, 2.8A

IRF7901D1 Datasheet और माड्यूल

निर्माता : IR 

पैकिंग : SO 

पिन : 8 

तापमान : न्यूनतम -55 °C | अधिकतम 150 °C

आकार : 281 KB

अनुप्रयोग : Dual FETKY co-packaged dual MOSFET plus schottky diode . VDS = 30V, RDS(on) = 38mOhm (Q1). VDS = 30V, RDS(on) = 32mOhm (Q2 and schottky). 

IRF7901D1 पीडीएफ डाउनलोड करें