पथ :OKDatasheet > सेमीकंडक्टर Datasheet > IR Datasheet > IRF7700
माड्यूल IRF7700 : HEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.015 Ohm, ID = -8.6A @ VGS = -4.5V. RDS(on) = 0.024 Ohm, ID = -7.3A @ VGS = -2.5V.
इसी प्रकार केIRF7700
- IRF7103
- N-channel power MOSFET for fast switching applications, 50V, 3A
- IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
- IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
- IRF7103QTR
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
- IRF720
- N-channel HEXFET, 400V, 3.3A
- IRF7204
- P-channel MOSFET for fast switching applications, 20V, 5.3A
- IRF721
- N-channel HEXFET, 350V, 3.3A
- IRF722
- N-channel HEXFET, 400V, 2.8A
IRF7700 Datasheet और माड्यूल
निर्माता : IR
पैकिंग : TSSOP
पिन : 8
तापमान : न्यूनतम -55 °C | अधिकतम 150 °C
आकार : 170 KB
अनुप्रयोग : HEXFET power MOSFET. VDSS = -20V, RDS(on) = 0.015 Ohm, ID = -8.6A @ VGS = -4.5V. RDS(on) = 0.024 Ohm, ID = -7.3A @ VGS = -2.5V.
IRF7700 पीडीएफ डाउनलोड करें