माड्यूल IRF3707S : HEXFET power MOSFET. VDSS = 30V, RDS(on) = 12.5 mOhm, ID = 62A

इसी प्रकार केIRF3707S

IRF3205
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
IRF3205L
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
IRF3205S
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
IRF330
- Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =400V, RDS(on) = 1.0 Ohm, ID = 5.5A
IRF330
- Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =400V, RDS(on) = 1.0 Ohm, ID = 5.5A
IRF3315
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.07 Ohm, ID = 27A
IRF3315L
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.082 Ohm, ID = 21A
IRF3315L
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.082 Ohm, ID = 21A

IRF3707S Datasheet और माड्यूल

निर्माता : IR

पैकिंग : DDPak

पिन : 3

तापमान : न्यूनतम -55 °C | अधिकतम 175 °C

आकार : 157 KB

अनुप्रयोग : HEXFET power MOSFET. VDSS = 30V, RDS(on) = 12.5 mOhm, ID = 62A