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इसी प्रकार केW4TRD8R-0D00

  • W4TRD0R-0D00
    • Diameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
  • W4TRD8R-0D00
    • Diameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W4TRD8R-0D00 Datasheet और माड्यूल

निर्माता : Cree 

पैकिंग :  

पिन : 0 

तापमान : न्यूनतम 0 °C | अधिकतम 0 °C

आकार : 306 KB

अनुप्रयोग : Diameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition 

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