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इसी प्रकार केW4NRD8C-U000

  • W4NRD8C-U000
    • Diameter 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
  • W4NRE0X-0D00
    • Diameter 76.2mm; standard micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W4NRD8C-U000 Datasheet और माड्यूल

निर्माता : Cree 

पैकिंग :  

पिन : 0 

तापमान : न्यूनतम 0 °C | अधिकतम 0 °C

आकार : 306 KB

अनुप्रयोग : Diameter 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition 

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