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इसी प्रकार के54S416T-5

  • 54S416T-5
    • High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA
  • 54S416T-6
    • High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA
  • 54S416T-7
    • High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA

54S416T-5 Datasheet और माड्यूल

निर्माता : Ceramate 

पैकिंग : TSOP 

पिन : 54 

तापमान : न्यूनतम 0 °C | अधिकतम 70 °C

आकार : 1126 KB

अनुप्रयोग : High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA 

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