इसी प्रकार केTC1025EPA

  • TC1014-2.5VCT
    • 50mA CMOS LDO with shutdown and reference bypass. Output voltage 2.5V.
  • TC1014-2.7VCT
    • 50mA CMOS LDO with shutdown and reference bypass. Output voltage 2.7V.
  • TC1014-3.0VCT
    • 50mA CMOS LDO with shutdown and reference bypass. Output voltage 3.0V.
  • TC1014-3.3VCT
    • 50mA CMOS LDO with shutdown and reference bypass. Output voltage 3.3V.
  • TC1014-5.0VCT
    • 50mA CMOS LDO with shutdown and reference bypass. Output voltage 5.0V.
  • TC1015-2.5VCT
    • 100mA CMOS LDO with shutdown and reference bypass. Output voltage 2.5V.
  • TC1015-2.7VCT
    • 100mA CMOS LDO with shutdown and reference bypass. Output voltage 2.7V.
  • TC1015-3.0VCT
    • 100mA CMOS LDO with shutdown and reference bypass. Output voltage 3.0 V.

TC1025EPA Datasheet और माड्यूल

निर्माता : TelCom Semiconductor 

पैकिंग : Plastic DIP 

पिन : 8 

तापमान : न्यूनतम -40 °C | अधिकतम 85 °C

आकार : 28 KB

अनुप्रयोग : Linear building block - dual low power comparator. 

TC1025EPA पीडीएफ डाउनलोड करें