इसी प्रकार केIRF9Z24S

  • IRF9130
    • Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS = -100V, RDS(on) = 0.30 Ohm, ID = -11A
  • IRF9140
    • HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A
  • IRF9140
    • HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A
  • IRF9140
    • HEXFET transistor thru-hole. BVDS = -100V, RDS(on) = 0.2 Ohm , ID = -18A
  • IRF9240
    • HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
  • IRF9240
    • HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
  • IRF9240
    • HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
  • IRF9240
    • HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A

IRF9Z24S Datasheet और माड्यूल

निर्माता : IR 

पैकिंग : DDPak 

पिन : 3 

तापमान : न्यूनतम -55 °C | अधिकतम 175 °C

आकार : 342 KB

अनुप्रयोग : HEXFET power MOSFET. VDSS = -60V, RDS(on) = 0.28 Ohm, ID = -11A 

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