इसी प्रकार केIRF7701

  • IRF7103
    • N-channel power MOSFET for fast switching applications, 50V, 3A
  • IRF7103Q
    • N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
  • IRF7103Q
    • N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
  • IRF7103QTR
    • N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
  • IRF720
    • N-channel HEXFET, 400V, 3.3A
  • IRF7204
    • P-channel MOSFET for fast switching applications, 20V, 5.3A
  • IRF721
    • N-channel HEXFET, 350V, 3.3A
  • IRF722
    • N-channel HEXFET, 400V, 2.8A

IRF7701 Datasheet और माड्यूल

निर्माता : IR 

पैकिंग : TSSOP 

पिन : 8 

तापमान : न्यूनतम -55 °C | अधिकतम 150 °C

आकार : 161 KB

अनुप्रयोग : HEXFET power MOSFET. VDSS = -12V, RDS(on) = 0.011 Ohm, ID = -10A @ VGS = -4.5V. RDS(on) = 0.015 Ohm, ID = -8.5A @ VGS = -2.5V. RDS(on) = 0.022 Ohm, ID = -7.0A @ VGS = -1.8V. 

IRF7701 पीडीएफ डाउनलोड करें