पथ :OKDatasheet > सेमीकंडक्टर Datasheet > HYNIX Datasheet > HY51VS18163HGJ-6
माड्यूल HY51VS18163HGJ-6 : Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns
इसी प्रकार केHY51VS18163HGJ-6
- HY51V17403HGJ-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns
- HY51V17403HGLJ-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power
- HY51V17403HGLJ-7
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power
- HY51V17403HGLT-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power
- HY51V17403HGLT-7
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power
- HY51V17403HGT-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns
- HY51V17403HGT-7
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns
- HY51V18163HGJ-7
- Dynamic RAM organized 1,048,576 words x 16bit, 70ns
HY51VS18163HGJ-6 Datasheet और माड्यूल
निर्माता : HYNIX
पैकिंग : SOJ
पिन : 42
तापमान : न्यूनतम 0 °C | अधिकतम 70 °C
आकार : 117 KB
अनुप्रयोग : Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns
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